BSC886 Series

Catalog

MOSFET N-CH 30V 13A/65A TDSON

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies BSC886N03LSGATMA1	4.5 V 10 V	30 V	2.5 W 39 W	2100 pF	PG-TDSON-8-1	2.2 V	8-PowerTDFN	26 nC	N-Channel	MOSFET (Metal Oxide)	6 mOhm	-55 °C	150 °C	20 V	Surface Mount	13 A 65 A