N-Channel MOSFET
N-Channel MOSFET
| Part | Mounting Type | Supplier Device Package | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | U-DFN2020-6 (Type E) | 660 mW | 6-PowerUDFN | 25.8 nC | -55 °C | 150 °C | MOSFET (Metal Oxide) | 10.5 A | N-Channel | 8 V | 1.1 V | 11 mOhm | 2453 pF | 1.5 V 4.5 V | 20 V |