PSMN8R5 Series

N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Catalog

N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Part	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package Name	Input Capacitance (Ciss) (Max)	Technology	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Mounting Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tj)
Nexperia USA Inc. PSMN8R5-40MSDX	N-Channel	8.5 mOhm	40 V	-55 °C	175 °C	10 V	59 W	LFPAK33	1322 pF	MOSFET (Metal Oxide)	8-LFPAK33 (5-Lead) SOT-1210	20 V	60 A	19 nC	Surface Mount	3.6 V
Nexperia USA Inc. PSMN8R5-40MLDX	N-Channel	8.5 mOhm	40 V	-55 °C	175 °C		59 W	LFPAK33	1814 pF	MOSFET (Metal Oxide)	8-LFPAK33 (5-Lead) SOT-1210	20 V	60 A	27 nC	Surface Mount	2.15 V	10 V	4.5 V
Nexperia USA Inc. PSMN8R5-100PSQ	N-Channel	8.5 mOhm	100 V	-55 °C	175 °C	10 V	263 W	TO-220AB	5512 pF	MOSFET (Metal Oxide)	TO-220-3	20 V		111 nC	Through Hole	4 V			100 A

Catalog

N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Description

60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.