1N6482 Series

Catalog

DIODE GEN PURP 600V 1A DO213AB

Part	Technology	Voltage - Forward (Vf) (Max)	Current - Reverse Leakage	Capacitance	Package / Case	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max)	Package Name	Mounting Type	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)
Vishay General Semiconductor - Diodes Division 1N6482-E3/96	Standard	1.1 V	10 µA	8 pF	DO-213AB MELF (Glass)	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 A	600 V	DO-213AB	Surface Mount	175 °C	-65 °C
Vishay General Semiconductor - Diodes Division 1N6482-E3/97	Standard	1.1 V	10 µA	8 pF	DO-213AB MELF (Glass)	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 A	600 V	DO-213AB	Surface Mount	175 °C	-65 °C
Vishay General Semiconductor - Diodes Division 1N6482HE3/97	Standard	1.1 V	10 µA	8 pF	DO-213AB MELF (Glass)	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 A	600 V	DO-213AB	Surface Mount	175 °C	-65 °C