1N5406 Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
| Part | Mounting Type | Voltage - DC Reverse (Vr) (Max) | Grade | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Capacitance | Package / Case | Package Name | Technology | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) | Current - Reverse Leakage | Qualification | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Through Hole | 600 V | Automotive | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 25 pF | Axial DO-201AD | DO-201AD | Standard | 3 A | 1 V | 5 µA | AEC-Q101 | 150 °C | -55 °C |
Taiwan Semiconductor Corporation | Through Hole | 600 V | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 25 pF | Axial DO-201AD | DO-201AD | Standard | 3 A | 1 V | 5 µA | 150 °C | -55 °C |