DMP2900UW Series

Dual P-Channel Enhancement Mode MOSFET

Catalog

Dual P-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power - Max [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMP2900UV-13	1 V	49 pF	0.7 nC	2 P-Channel	20 V	MOSFET (Metal Oxide)	Surface Mount	850 mA	SOT-563 SOT-666	750 mOhm	-55 °C	150 °C	SOT-563	500 mW
Diodes Inc DMP2900UW-13	1 V	49 pF			20 V	MOSFET (Metal Oxide)	Surface Mount	600 mA	SC-70 SOT-323	750 mOhm	-55 °C	150 °C	SOT-323		6 V	300 mW	0.7 nC	P-Channel	1.8 V 4.5 V
Diodes Inc DMP2900UW-7	1 V	49 pF			20 V	MOSFET (Metal Oxide)	Surface Mount	600 mA	SC-70 SOT-323	750 mOhm	-55 °C	150 °C	SOT-323		6 V	300 mW	0.7 nC	P-Channel	1.8 V 4.5 V
Diodes Inc DMP2900UT-7	1 V	49 pF			20 V	MOSFET (Metal Oxide)	Surface Mount	500 mA	SOT-523	700 mOhm	-55 °C	150 °C	SOT-523		6 V	250 mW	0.7 nC	P-Channel	1.8 V 4.5 V
Diodes Inc DMP2900UV-7	1 V	49 pF	0.7 nC	2 P-Channel	20 V	MOSFET (Metal Oxide)	Surface Mount	850 mA	SOT-563 SOT-666	750 mOhm	-55 °C	150 °C	SOT-563	500 mW

Catalog

Dual P-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific changecontrol (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certified facilities),please contact us or your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.