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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Grade | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Qualification | Rds On (Max) | Power Dissipation (Max) | Package Name | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Technology | Vgs (Max) | FET Type | Package / Case | Current - Continuous Drain (Id) (Ta) | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 4.5 V | 1.8 V | AEC-Q101 | 24 mOhm | 8.3 W 610 mW | TO-236AB | 1150 pF | 900 mV | MOSFET (Metal Oxide) | 8 V | N-Channel | SC-59 SOT-23-3 TO-236-3 | 6 A | -55 °C | 175 °C | Surface Mount | 30 V | 18.6 nC |