Beta
⌘K
IR MOSFET™ P-CHANNEL ; SUPERSO8 5X6 PACKAGE; 4.6 MOHM;
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 21 A 40 A | 3.1 W | PQFN (5x6) | MOSFET (Metal Oxide) | 30 V | 20 V | P-Channel | 5250 pF | -55 °C | 150 °C | 58 nC | 4.6 mOhm | 8-PowerVDFN | 4.5 V 10 V |