IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 4.7 MOHM;
| Part | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Vgs (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Through Hole | 10 V | N-Channel | MOSFET (Metal Oxide) | 20 V | I2PAK TO-262-3 Long Leads TO-262AA | 180 A | 100 V | 4 V | -55 °C | 175 ░C | TO-262 | 215 nC | 375 W | 9575 pF | 4.7 mOhm |