MBR60040 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 40V 300A 2TOWER
| Part | Technology | Current - Reverse Leakage | Voltage - DC Reverse (Vr) (Max) | Package / Case | Mounting Type | Voltage - Forward (Vf) (Max) | Package Name | Diode Pair Count | Diode Configuration | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Schottky | 5 mA | 40 V | Twin Tower | Chassis Mount | 600 mV | Twin Tower | 1 pair | Common Cathode | 500 ns | 200 mA | 150 °C | -55 °C | 300 A |
GeneSiC Semiconductor | Schottky | 5 mA | 40 V | Twin Tower | Chassis Mount | 600 mV | Twin Tower | 1 pair | Common Anode | 500 ns | 200 mA | 150 °C | -55 °C | 300 A |
GeneSiC Semiconductor | Schottky | 1 mA | 40 V | Twin Tower | Chassis Mount | 750 mV | Twin Tower | 1 pair | Common Cathode | 500 ns | 200 mA | 150 °C | -55 °C | 300 A |
GeneSiC Semiconductor | Schottky | 1 mA | 40 V | Twin Tower | Chassis Mount | 750 mV | Twin Tower | 1 pair | Common Anode | 500 ns | 200 mA | 150 °C | -55 °C | 300 A |
GeneSiC Semiconductor | Schottky | 1 mA | 40 V | Twin Tower | Chassis Mount | 750 mV | Twin Tower | 1 pair | Common Anode | 500 ns | 200 mA | 150 °C | -55 °C | 300 A |
GeneSiC Semiconductor | Schottky | 1 mA | 40 V | Twin Tower | Chassis Mount | 750 mV | Twin Tower | 1 pair | Common Cathode | 500 ns | 200 mA | 150 °C | -55 °C | 300 A |
GeneSiC Semiconductor | Schottky | 5 mA | 40 V | Twin Tower | Chassis Mount | 600 mV | Twin Tower | 1 pair | Common Cathode | 500 ns | 200 mA | 150 °C | -55 °C | 300 A |
GeneSiC Semiconductor | Schottky | 5 mA | 40 V | Twin Tower | Chassis Mount | 600 mV | Twin Tower | 1 pair | Common Anode | 500 ns | 200 mA | 150 °C | -55 °C | 300 A |