BSS169 Series

Catalog

MOSFET N-CH 100V 170MA SOT23-3

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Package / Case	Vgs (Max)	Grade	FET Feature
Infineon Technologies BSS169H6906XTSA1	1.8 V	100 V	68 pF	PG-SOT23	2.8 nC	N-Channel Depletion Mode	MOSFET (Metal Oxide)	170 mA	10 V	0 V	-55 °C	150 °C	AEC-Q101	6 Ohm	Surface Mount	360 mW	SC-59 SOT-23-3 TO-236-3	20 V	Automotive
Infineon Technologies BSS169H6327XTSA1	1.8 V	100 V	68 pF	PG-SOT23	2.8 nC	N-Channel	MOSFET (Metal Oxide)	170 mA	10 V	0 V	-55 °C	150 °C	AEC-Q101	6 Ohm	Surface Mount	360 mW	SC-59 SOT-23-3 TO-236-3	20 V	Automotive	Depletion Mode