POWER BIPOLAR TRANSISTOR, 1A I(C), 20V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN
| Part | Transistor Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Frequency - Transition | Mounting Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | NPN | -55 °C | 150 °C | TO-261-4 TO-261AA | 1 A | 20 V | 2 W | 500 mV | SOT-223-3 | 100 MHz | Surface Mount | 63 |