IPP020 Series

Catalog

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; TO-220 PACKAGE; 2 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Package / Case	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPP020N06NAKSA1	6 V 10 V	29 A 120 A	-55 °C	175 ░C	7800 pF	MOSFET (Metal Oxide)	TO-220-3	PG-TO220-3	Through Hole	3 W 214 W	106 nC	20 V	N-Channel	2 mOhm	2.8 V	60 V
Infineon Technologies IPP020N08N5AKSA1	6 V 10 V	120 A	-55 °C	175 ░C		MOSFET (Metal Oxide)	TO-220-3	PG-TO220-3	Through Hole			20 V	N-Channel	2 mOhm	3.8 V	80 V	223 nC	375 W	16900 pF