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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Technology | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Mounting Type | FET Type | Package Name | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 2.7 W 360 mW | 4.5 V | 1.5 V | 1.4 Ohm | 20 V | 950 mV | SC-101 SOT-883 | 8 V | 43 pF | 500 mA | Surface Mount | P-Channel | SOT-883 | 2.1 nC | -55 °C | 150 °C |