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12 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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12 V, N-channel Trench MOSFET
12 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Package Name | Rds On (Max) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Vgs (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3.2 A | 12 V | 3-XDFN Exposed Pad | 8.33 W 400 mW | DFN1010D-3 | 45 mOhm | 11.6 nC | -55 °C | 150 °C | N-Channel | 8 V | 900 mV | 556 pF | MOSFET (Metal Oxide) | Surface Mount |