DMP3021SFVWQ Series

30V P-Channel Enhancement Mode MOSFET PowerDI3333-8

Catalog

30V P-Channel Enhancement Mode MOSFET PowerDI3333-8

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	FET Type
Diodes Inc DMP3021SFVW-7	1799 pF	34 nC	11 A 42 A	MOSFET (Metal Oxide)	15 mOhm	8-PowerVDFN	30 V	Surface Mount	2.5 V	-55 °C	150 °C	1 W	POWERDI3333-8	10 V	5 V	25 V	P-Channel
Diodes Inc DMP3021SFVWQ-13	1799 pF	34 nC	11 A 42 A	MOSFET (Metal Oxide)	15 mOhm	8-PowerVDFN	30 V	Surface Mount Wettable Flank	2.5 V	-55 °C	150 °C	1 W	PowerDI3333-8 (SWP) Type UX	10 V	5 V	25 V	P-Channel

Catalog

30V P-Channel Enhancement Mode MOSFET PowerDI3333-8

Key Features

• Low RDS(on) – ensures on-state losses are minimized

• Small form factor thermally efficient package enables higherdensity end products

• Occupies just 33% of the board area occupied by SO-8 enablingsmaller end product

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

• An Automotive-Compliant Part is Available Under SeparateDatasheet (DMP3021SFVWQ)

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.