
MCP14E7 Series
Manufacturer: Microchip Technology
IC GATE DRVR LOW-SIDE 8SOIC
| Part | Gate Type | Channel Type | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Driven Configuration | Package Name | Input Type | Package Length | Package Width | Gate Channel | Logic Voltage - VIH | Logic Voltage - VIL | Number of Drivers | Rise Time (Typ) | Fall Time (Typ) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Peak Output (Sink) | Current - Peak Output (Source) | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Independent | 18 V | 4.5 V | Low-Side | 8-SOIC | Non-Inverting | 0.154 in | 3.9 mm | N-Channel P-Channel | 2.4 V | 0.8 V | 2 | 12 ns | 15 ns | -40 °C | 150 °C | 2 A | 2 A | Surface Mount | |
Microchip Technology | IGBT MOSFET | Independent | 18 V | 4.5 V | Low-Side | 8-DFN-S | Non-Inverting | 6 mm | 5 mm | N-Channel P-Channel | 2.4 V | 0.8 V | 2 | 12 ns | 15 ns | -40 °C | 150 °C | 2 A | 2 A | Surface Mount | 8-VDFN Exposed Pad |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Independent | 18 V | 4.5 V | Low-Side | 8-DFN-S | Non-Inverting | 6 mm | 5 mm | N-Channel P-Channel | 2.4 V | 0.8 V | 2 | 12 ns | 15 ns | -40 °C | 150 °C | 2 A | 2 A | Surface Mount | 8-VDFN Exposed Pad |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Independent | 18 V | 4.5 V | Low-Side | 8-SOIC | Non-Inverting | 0.154 in | 3.9 mm | N-Channel P-Channel | 2.4 V | 0.8 V | 2 | 12 ns | 15 ns | -40 °C | 150 °C | 2 A | 2 A | Surface Mount | |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Independent | 18 V | 4.5 V | Low-Side | 8-DIP 8-PDIP | Non-Inverting | 0.3 in | 7.62 mm | N-Channel P-Channel | 2.4 V | 0.8 V | 2 | 12 ns | 15 ns | -40 °C | 150 °C | 2 A | 2 A | Through Hole |