IXFP7N80 Series

DiscMosfetN-CH HiPerFET-Pola TO-220AB/FP

Catalog

DiscMosfetN-CH HiPerFET-Pola TO-220AB/FP

Part	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max)	FET Type	Gate Charge (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Rds On (Max)
LITTELFUSE IXFP7N80PM	MOSFET (Metal Oxide)	800 V	50 W	10 V	1890 pF	30 V	N-Channel	32 nC	TO-220-3	-55 °C	150 °C	Through Hole	5 V	TO-220-3	3.5 A	1.44 Ohm
LITTELFUSE IXFP7N80PM	MOSFET (Metal Oxide)	800 V	50 W	10 V	1890 pF	30 V	N-Channel	32 nC	TO-220-3	-55 °C	150 °C	Through Hole	5 V	TO-220-3	3.5 A	1.44 Ohm
LITTELFUSE IXFP7N80P	MOSFET (Metal Oxide)	800 V	200 W	10 V	1890 pF	30 V	N-Channel	32 nC	TO-220-3	-55 °C	150 °C	Through Hole	5 V	TO-220-3	7 A	1.44 Ohm
LITTELFUSE IXFP7N80P	MOSFET (Metal Oxide)	800 V	200 W	10 V	1890 pF	30 V	N-Channel	32 nC	TO-220-3	-55 °C	150 °C	Through Hole	5 V	TO-220-3	7 A	1.44 Ohm

Catalog

DiscMosfetN-CH HiPerFET-Pola TO-220AB/FP

Description

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings