100V/Asymmetrical bridge/Si Mosfet modules
100V/Asymmetrical bridge/Si Mosfet modules
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Vgs (Max) | Package / Case | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Vgs(th) (Max) | FET Type | Channel Count | Configuration | Configuration - Features | Current - Continuous Drain (Id) | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | 1250 W | 10 V | 2.5 mOhm | 40000 pF | MOSFET (Metal Oxide) | 100 V | 495 A | 1360 nC | 30 V | SP6 | Chassis Mount | -40 °C | 150 °C | SP6 | 4 V | N-Channel | |||||
Microchip Technology | 780 W | 10 V | 5 mOhm | 20000 pF | MOSFET (Metal Oxide) | 100 V | 278 A | 700 nC | 30 V | SP4 | Chassis Mount | -40 °C | 150 °C | SP4 | 4 V | N-Channel | |||||
 Microchip Technology | 2500 W | 10 V | 1.6 mOhm | 60000 pF | MOSFET (Metal Oxide) | 100 V | 860 A | 2100 nC | 30 V | SP6 | Chassis Mount | -40 °C | 150 °C | SP6 | 4 V | N-Channel | |||||
 Microchip Technology | 21 mOhm | 5100 pF | MOSFET (Metal Oxide) | 100 V | 200 nC | SP6 | Chassis Mount | -40 °C | 150 °C | SP6-P | 4 V | 6 | N-Channel | 3-Phase Bridge | 70 A | 208 W | |||||
Microchip Technology | 10 mOhm | 9875 pF | MOSFET (Metal Oxide) | 100 V | 350 nC | SP6 | Chassis Mount | -40 °C | 150 °C | SP6-P | 4 V | 6 | N-Channel | 3-Phase Bridge | 139 A | 390 W | |||||
Microchip Technology | 10 mOhm | 9875 pF | MOSFET (Metal Oxide) | 100 V | 350 nC | SP3 | Chassis Mount | -40 °C | 150 °C | SP3 | 4 V | 4 | N-Channel | Full Bridge | 139 A | 390 W | |||||
Microchip Technology | 5 mOhm | 20000 pF | MOSFET (Metal Oxide) | 100 V | 700 nC | SP4 | Chassis Mount | -40 °C | 150 °C | SP4 | 4 V | 2 | N-Channel | Half Bridge | 278 A | 780 W | |||||
Microchip Technology | 1250 W | 10 V | 2.5 mOhm | 40000 pF | MOSFET (Metal Oxide) | 100 V | 495 A | 1360 nC | 30 V | SP6 | Chassis Mount | -40 °C | 150 °C | SP6 | 4 V | N-Channel | |||||
Microchip Technology | 5 mOhm | 20000 pF | MOSFET (Metal Oxide) | 100 V | 700 nC | SP6 | Chassis Mount | -40 °C | 150 °C | SP6 | 4 V | 2 | Asymmetrical N-Channel | Dual | 278 A | 780 W | |||||
Microchip Technology | 10 mOhm | 9875 pF | MOSFET (Metal Oxide) | 100 V | 350 nC | SP3 | Chassis Mount | -40 °C | 150 °C | SP3 | 4 V | 2 | N-Channel | Dual | 139 A | 390 W |