BC55 Series

Catalog

BJT TO92 65V 100MA PNP 0.5W 150C

Part	DC Current Gain (hFE) (Min)	Voltage - Collector Emitter Breakdown (Max)	Power - Max	Current - Collector (Ic) (Max)	Package Name	Vce Saturation (Max)	Package / Case	Frequency - Transition	Mounting Type	Transistor Type	Current - Collector Cutoff (Max)	Operating Temperature
NXP USA Inc. BC556A,112	125	65 V	0.5 W	0.1 mA	TO-92-3	650 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	PNP	15 nA	150 °C
NXP USA Inc. BC550C,112	420	45 V	0.5 W	0.1 mA	TO-92-3	600 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	NPN	15 nA	150 °C
NXP USA Inc. BC556B,116	220	65 V	0.5 W	0.1 mA	TO-92-3	650 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	PNP	15 nA	150 °C
NXP USA Inc. BC557,112	125	45 V	0.5 W	0.1 mA	TO-92-3	650 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	PNP	15 nA	150 °C
NXP USA Inc. BC557C,126	420	45 V	0.5 W	0.1 mA	TO-92-3	650 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	PNP	15 nA	150 °C
NXP USA Inc. BC559C,116	420	30 V	0.5 W	0.1 mA	TO-92-3	650 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	PNP	15 nA	150 °C
NXP USA Inc. BC557B,116	220	45 V	0.5 W	0.1 mA	TO-92-3	650 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	PNP	15 nA	150 °C
NXP USA Inc. BC550C,116	420	45 V	0.5 W	0.1 mA	TO-92-3	600 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	NPN	15 nA	150 °C
NXP USA Inc. BC557B,126	220	45 V	0.5 W	0.1 mA	TO-92-3	650 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	PNP	15 nA	150 °C
NXP USA Inc. BC556B,112	220	65 V	0.5 W	0.1 mA	TO-92-3	650 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 MHz	Through Hole	PNP	15 nA	150 °C