DIODE GEN PURP 50V 1A DO214AC
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Technology | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Package / Case | Current - Average Rectified (Io) | Supplier Device Package | Grade | Capacitance @ Vr, F | Qualification | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 175 ░C | -55 C | 50 V | Standard Recovery >500ns | 200 mA | Surface Mount | 1.1 V | Standard | 1500 ns | 1 µA | DO-214AC SMA | 1 A | DO-214AC (SMA) | ||||
Taiwan Semiconductor Corporation | 175 ░C | -55 C | 50 V | Standard Recovery >500ns | 200 mA | Surface Mount | 1.1 V | Standard | 1.8 µs | 5 µA | DO-219AB | 1 A | Sub SMA | Automotive | 9 pF | AEC-Q101 | |
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 50 V | Standard Recovery >500ns | 200 mA | Surface Mount | 1.1 V | Standard | 5 µA | DO-214AA SMB | 1 A | DO-214AA | SMB | ||||
Taiwan Semiconductor Corporation | 175 ░C | -55 C | 50 V | Standard Recovery >500ns | 200 mA | Surface Mount | 1.1 V | Standard | 1.8 µs | 5 µA | DO-219AB | 1 A | Sub SMA | 9 pF | |||
Taiwan Semiconductor Corporation | 175 ░C | -55 C | 50 V | Standard Recovery >500ns | 200 mA | Surface Mount | 1.1 V | Standard | 1500 ns | 1 µA | DO-214AC SMA | 1 A | DO-214AC (SMA) | Automotive | AEC-Q101 |