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40 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, P-channel Trench MOSFET
40 V, P-channel Trench MOSFET
| Part | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Grade | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Rds On (Max) | Drain to Source Voltage (Vdss) | Qualification | Technology | Vgs(th) (Max) | Vgs (Max) | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Mounting Type | Package Name | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | -55 °C | 175 °C | P-Channel | Automotive | 64 nC | 10 V | 4.5 V | SC-100 SOT-669 | 14 mOhm | 40 V | AEC-Q101 | MOSFET (Metal Oxide) | 3 V | 20 V | 64 A | 2300 pF | Surface Mount | LFPAK56 Power-SO8 | 110 W |