GP3D010 Series
Manufacturer: SemiQ
DIODE SIL CARB 1.2KV 10A TO247-2
| Part | Technology | Capacitance | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Mounting Type | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage | Voltage - Forward (Vf) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ | SiC (Silicon Carbide) Schottky | 608 pF | 10 A | 0 ns | Through Hole | 500 mA | No Recovery Time | 500 mA 500 mA | TO-247-2 | 175 °C | -55 °C | TO-247-2 | 1200 V | 20 µA | 1.65 V |
SemiQ | SiC (Silicon Carbide) Schottky | 419 pF | 10 A | 0 ns | Through Hole | 500 mA | No Recovery Time | 500 mA 500 mA | TO-220-2 | 175 °C | -55 °C | TO-220-2 | 650 V | 25 µA | 1.6 V |