Beta
⌘K
POWER MOSFET, N CHANNEL, 60 V, 90 A, 0.0033 OHM, TO-220, THROUGH HOLE
| Part | Package / Case | FET Type | Power Dissipation (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-220-3 | N-Channel | 188 W | Through Hole | 4 mOhm | 60 V | 10 V | PG-TO220-3 | MOSFET (Metal Oxide) | 4 V | 98 nC | 20 V | -55 °C | 175 ░C | 11000 pF | 90 A | |
Infineon Technologies | TO-220-3 | N-Channel | 3 W 107 W | Through Hole | 4 mOhm | 60 V | 6 V 10 V | PG-TO220-3 | MOSFET (Metal Oxide) | 2.8 V | 20 V | -55 °C | 175 ░C | 2700 pF | 20 A 80 A | 38 nC |