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OPTIMOS™ PD POWER MOSFET ISZ0602NLS IN THE PQFN 3.3X3.3 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.
| Part | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.1 W 60 W | 2.3 V | 29 nC | 4.5 V 10 V | MOSFET (Metal Oxide) | 8-PowerTDFN | 1860 pF | 80 V | PG-TSDSON-8-26 | 20 V | 12 A 64 A | -55 °C | 150 °C | Surface Mount | 7.8 mOhm | N-Channel |