PSMN5R0 Series

N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Catalog

N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Part	Power Dissipation (Max)	Vgs(th) (Max)	Package Name	Rds On (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Package / Case	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Nexperia USA Inc. PSMN5R0-40MSHX	83 W	3.6 V	LFPAK33	5 mOhm 5 mOhm	Surface Mount	2010 pF	N-Channel	40 V	10 V	MOSFET (Metal Oxide)	85 A	20 V	8-LFPAK33 (5-Lead) SOT-1210	29 nC	-55 °C	175 °C
Nexperia USA Inc. PSMN5R0-40MLHX	83 W	2.15 V	LFPAK33	5 mOhm 5 mOhm	Surface Mount	2649 pF	N-Channel	40 V		MOSFET (Metal Oxide)	85 A	20 V	8-LFPAK33 (5-Lead) SOT-1210	39 nC	-55 °C	175 °C	10 V	4.5 V
Nexperia USA Inc. PSMN5R0-100ES,127	338 W	4 V	I2PAK	5 mOhm	Through Hole	9900 pF	N-Channel	100 V	10 V	MOSFET (Metal Oxide)	120 A	20 V	I2PAK TO-262-3 Long Leads TO-262AA	170 nC	-55 °C	175 °C
Nexperia USA Inc. PSMN5R0-30YL,115	61 W	2.15 V	LFPAK56 Power-SO8	5 mOhm	Surface Mount	1760 pF	N-Channel	30 V		MOSFET (Metal Oxide)	91 A	20 V	SC-100 SOT-669	29 nC	-55 °C	175 °C	10 V	4.5 V
Nexperia USA Inc. PSMN5R0-80PS,127	270 W	4 V	TO-220AB	4.7 mOhm	Through Hole	6793 pF	N-Channel	80 V	10 V	MOSFET (Metal Oxide)	100 A	20 V	TO-220-3	101 nC 101 nC	-55 °C	175 °C

Catalog

N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Description

85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.