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Dual N-Channel Enhancement Mode MOSFET
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Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | Drain to Source Voltage (Vdss) | Mounting Type | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 25.1 nC | 2.5 V | MOSFET (Metal Oxide) | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | 2 N-Channel (Dual) | 30 V | Surface Mount | 1.2 W | 1415 pF | 8.4 A | -55 °C | 150 °C |