1N5624 Series

Catalog

DIODE GEN PURP 200V 3A DO201AD

Part	Current - Reverse Leakage	Technology	Voltage - Forward (Vf) (Max)	Reverse Recovery Time (trr)	Package Name	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Capacitance	Current - Average Rectified (Io)	Package / Case
Vishay General Semiconductor - Diodes Division 1N5624GP-E3/54	5 µA	Standard	1 V	3 µs	DO-201AD	175 °C	-65 °C	Through Hole	200 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	40 pF	3 A	Axial DO-201AD
Vishay General Semiconductor - Diodes Division 1N5624-TR	1 µA	Avalanche	1 V	7.5 µs	SOD-64	175 °C	-55 °C	Through Hole	200 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	60 pF	3 A	Axial SOD-64
Vishay General Semiconductor - Diodes Division 1N5624-TAP	1 µA	Avalanche	1 V	7.5 µs	SOD-64	175 °C	-65 °C	Through Hole	200 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	60 pF	3 A	Axial SOD-64
Vishay General Semiconductor - Diodes Division 1N5624GP-E3/73	5 µA	Standard	1 V	3 µs	DO-201AD	175 °C	-65 °C	Through Hole	200 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	40 pF	3 A	Axial DO-201AD