65V N-Channel Enhancement Mode MOSFET
65V N-Channel Enhancement Mode MOSFET
| Part | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount Wettable Flank | PowerDI5060-8 (Type UX) | 2.5 V | 20 V | 51.4 nC | 65 V | 21.8 A 81.7 A | 4.4 mOhm | 4.5 V 10 V | 8-PowerTDFN | 2626 pF | -55 °C | 150 °C | 3.14 W 44 W | N-Channel | MOSFET (Metal Oxide) |