GD25LQ80 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 8MBIT SPI/QUAD 8USON
| Part | Memory Interface (Type) | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Package Width | Package Name | Package Length | Technology | Memory Format | Access Time | Mounting Type | Write Cycle Time - Page | Write Cycle Time - Word | Memory Width | Memory Depth | Package / Case | Memory Type | Clock Frequency | Memory Size | Operating Temperature (Max) | Operating Temperature (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 2 mm | 8-USON | 3 mm | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 4 ms | 100 µs | 8 bit | 1 M | 8-XFDFN Exposed Pad | Non-Volatile | 133 MHz | 1 MB | 125 °C | -40 °C |
GigaDevice Semiconductor (HK) Limited | SPI - Quad I/O | 1.65 V | 2.1 V | 5.3 mm | 8-SOIC 8-SOP | 0.209 in | FLASH - NOR | FLASH | Surface Mount | 2.4 ms | 50 µs | 8 bit | 1 M | Non-Volatile | 104 MHz | 1 MB | 85 °C | -40 °C | ||
GigaDevice Semiconductor (HK) Limited | SPI - Quad I/O | 1.65 V | 2.1 V | 3.9 mm | 8-SOIC 8-SOP | 0.154 in | FLASH - NOR | FLASH | Surface Mount | 2.4 ms | 50 µs | 8 bit | 1 M | Non-Volatile | 104 MHz | 1 MB | 85 °C | -40 °C | ||
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 2 mm | 8-USON | 3 mm | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 4 ms | 100 µs | 8 bit | 1 M | 8-XFDFN Exposed Pad | Non-Volatile | 133 MHz | 1 MB | 125 °C | -40 °C |
GigaDevice Semiconductor (HK) Limited | SPI - Quad I/O | 1.65 V | 2.1 V | 3 mm | 8-USON | 2 mm | FLASH - NOR | FLASH | Surface Mount | 2.4 ms | 50 µs | 8 bit | 1 M | 8-XFDFN Exposed Pad | Non-Volatile | 104 MHz | 1 MB | 85 °C | -40 °C | |
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | ||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 2 mm | 8-USON | 3 mm | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 2.4 ms | 60 µs | 8 bit | 1 M | 8-XFDFN Exposed Pad | Non-Volatile | 133 MHz | 1 MB | 85 °C | -40 °C |
GigaDevice Semiconductor (HK) Limited | SPI - Quad I/O | 1.65 V | 2.1 V | 4 mm | 8-USON | 3 mm | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 3 ms | 80 µs | 8 bit | 1 M | 8-UDFN Exposed Pad | Non-Volatile | 90 MHz | 1 MB | 105 °C | -40 °C |
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 3.9 mm | 8-SOIC 8-SOP | 0.154 in | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 4 ms | 100 µs | 8 bit | 1 M | Non-Volatile | 133 MHz | 1 MB | 125 °C | -40 °C | |
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 5.3 mm | 8-SOIC 8-SOP | 0.209 in | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 2.4 ms | 60 µs | 8 bit | 1 M | Non-Volatile | 133 MHz | 1 MB | 85 °C | -40 °C |