IC GATE DRVR LOW-SIDE 8SOIC
| Part | Supplier Device Package | Voltage - Supply [Min] | Voltage - Supply [Max] | Gate Type | Number of Drivers | Channel Type | Operating Temperature [Max] | Operating Temperature [Min] | Driven Configuration | Input Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | 6 V | 20 V | IGBT N-Channel MOSFET | 2 | Independent | 150 °C | -40 °C | Low-Side | Non-Inverting | 15 ns | 10 ns | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 0.8 V 2.7 V | 3.3 A | 2.3 A | ||
Infineon Technologies | 8-PDIP | 6 V | 20 V | IGBT N-Channel MOSFET | 2 | Independent | 150 °C | -40 °C | Low-Side | Non-Inverting | 15 ns | 10 ns | Through Hole | 8-DIP | 0.8 V 2.7 V | 3.3 A | 2.3 A | 0.3 in | 7.62 mm | ||
Infineon Technologies | 8-PDIP | 6 V | 20 V | IGBT N-Channel MOSFET | 2 | Independent | 150 °C | -40 °C | Low-Side | Non-Inverting | 15 ns | 10 ns | Through Hole | 8-DIP | 0.8 V 2.7 V | 3.3 A | 2.3 A | 0.3 in | 7.62 mm | ||
Infineon Technologies | 8-SOIC | 6 V | 20 V | IGBT N-Channel MOSFET | 2 | Independent | 150 °C | -40 °C | Low-Side | Non-Inverting | 15 ns | 10 ns | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 0.8 V 2.7 V | 3.3 A | 2.3 A | ||
Infineon Technologies | 8-PDIP | 6 V | 20 V | IGBT N-Channel MOSFET | 2 | Independent | 150 °C | -40 °C | Low-Side | Non-Inverting | 15 ns | 10 ns | Through Hole | 8-DIP | 0.8 V 2.7 V | 3.3 A | 2.3 A | 0.3 in | 7.62 mm | ||
Infineon Technologies | 8-SOIC | 6 V | 20 V | IGBT N-Channel MOSFET | 2 | Independent | 150 °C | -40 °C | Low-Side | Non-Inverting | 15 ns | 10 ns | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 0.8 V 2.7 V | 3.3 A | 2.3 A | ||
Infineon Technologies | 8-SOIC | 6 V | 20 V | IGBT MOSFET | 2 | Independent | 150 °C | -40 °C | Low-Side | Non-Inverting | 15 ns | 10 ns | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 0.8 V 2.7 V | 3.3 A | 2.3 A |