IC NVSRAM 64KBIT PARALLEL 28EDIP
Part | Package / Case | Package / Case | Package / Case | Access Time | Memory Format | Memory Organization | Technology | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Memory Interface | Memory Type | Mounting Type | Memory Size | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1225AD-150IND | 0.6 in | 28-DIP Module | 15.24 mm | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 150 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-170+ | 0.6 in | 28-DIP Module | 15.24 mm | 170 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 170 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-85+ | |||||||||||||||||
Analog Devices Inc./Maxim Integrated DS1225AB-200+ | 0.6 in | 28-DIP Module | 15.24 mm | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 200 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-150 | 0.6 in | 28-DIP Module | 15.24 mm | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 150 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-70+ | 0.6 in | 28-DIP Module | 15.24 mm | 70 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C | |
Analog Devices Inc./Maxim Integrated DS1225AD-200 | 0.6 in | 28-DIP Module | 15.24 mm | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 200 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-200IND+ | 0.6 in | 28-DIP Module | 15.24 mm | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 200 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-85 | 0.6 in | 28-DIP Module | 15.24 mm | 85 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 85 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-70IND | 0.6 in | 28-DIP Module | 15.24 mm | 70 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C | |
Analog Devices Inc./Maxim Integrated DS1225AB-70+ | 0.6 in | 28-DIP Module | 15.24 mm | 70 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C | |
Analog Devices Inc./Maxim Integrated DS1225AD-200IND+ | 0.6 in | 28-DIP Module | 15.24 mm | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 200 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-70 | 0.6 in | 28-DIP Module | 15.24 mm | 70 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C | |
Analog Devices Inc./Maxim Integrated DS1225AB-200IND | 0.6 in | 28-DIP Module | 15.24 mm | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 200 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-150+ | 0.6 in | 28-DIP Module | 15.24 mm | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 150 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-150IND+ | 0.6 in | 28-DIP Module | 15.24 mm | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 150 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-85 | 0.6 in | 28-DIP Module | 15.24 mm | 85 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 85 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-150IND | 0.6 in | 28-DIP Module | 15.24 mm | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 150 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-200 | 0.6 in | 28-DIP Module | 15.24 mm | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 200 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-70IND | 0.6 in | 28-DIP Module | 15.24 mm | 70 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C | |
Analog Devices Inc./Maxim Integrated DS1225AB-85+ | 0.6 in | 28-DIP Module | 15.24 mm | 85 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 85 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-70IND+ | 0.6 in | 28-DIP Module | 15.24 mm | 70 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C | |
Analog Devices Inc./Maxim Integrated DS1225AD-150IND+ | 0.6 in | 28-DIP Module | 15.24 mm | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 150 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-85+ | 0.6 in | 28-DIP Module | 15.24 mm | 85 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 85 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-200IND | 0.6 in | 28-DIP Module | 15.24 mm | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 200 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-150 | 0.6 in | 28-DIP Module | 15.24 mm | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | 150 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-170+ | 0.6 in | 28-DIP Module | 15.24 mm | 170 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 170 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AB-70 | 0.6 in | 28-DIP Module | 15.24 mm | 70 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C | |
Analog Devices Inc./Maxim Integrated DS1225AB-150+ | 0.6 in | 28-DIP Module | 15.24 mm | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.75 V | 5.25 V | 150 ns | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 70 °C | 0 °C |
Analog Devices Inc./Maxim Integrated DS1225AD-70IND+ | 0.6 in | 28-DIP Module | 15.24 mm | 70 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | 4.5 V | 5.5 V | Parallel | Non-Volatile | Through Hole | 64 Kbit | 28-EDIP | 85 °C | -40 °C |