MBRTA800 Series

Catalog

DIODE MOD SCHOT 100V 400A 3TOWER

Part	Diode Pair Count	Diode Configuration	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Mounting Type	Technology	Package Name	Package / Case
GeneSiC Semiconductor MBRTA800100R	1 pair	Common Anode	1 mA	150 °C	-55 °C	500 ns	200 mA	840 mV	100 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80030	1 pair	Common Cathode	1 mA	150 °C	-55 °C	500 ns	200 mA	720 mV	30 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80080	1 pair	Common Cathode	1 mA	150 °C	-55 °C	500 ns	200 mA	840 mV	80 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80045RL	1 pair	Common Anode	6 mA	150 °C	-55 °C	500 ns	200 mA	600 mV	45 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80020RL	1 pair	Common Anode	3 mA	150 °C	-55 °C	500 ns	200 mA	580 mV	20 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80045	1 pair	Common Cathode	1 mA	150 °C	-55 °C	500 ns	200 mA	720 mV	45 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80035	1 pair	Common Cathode	1 mA	150 °C	-55 °C	500 ns	200 mA	720 mV	35 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80020R	1 pair	Common Anode	1 mA	150 °C	-55 °C	500 ns	200 mA	720 mV	20 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80045L	1 pair	Common Cathode	6 mA	150 °C	-55 °C	500 ns	200 mA	600 mV	45 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80020RL	1 pair	Common Anode	3 mA	150 °C	-55 °C	500 ns	200 mA	580 mV	20 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower