Catalog
N-Channel MOSFET
Description
AI
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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N-Channel MOSFET
N-Channel MOSFET
| Part | FET Type | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | N-Channel | 8 V | 360 mW | X2-DFN0806-3 | 20 V | 1 V | 3-XFDFN | MOSFET (Metal Oxide) | Surface Mount | 0.88 nC | 1.5 V 4.5 V | -55 °C | 150 °C | 600 mA | 450 mOhm |