IC FLASH 4GBIT PARALLEL 63BGA
| Part | Memory Type | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Memory Interface | Write Cycle Time - Word, Page | Technology | Memory Organization | Memory Size | Supplier Device Package | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Access Time | Package / Case [y] | Package / Case [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Kioxia America, Inc. TH58NVG2S3HBAI4 | Non-Volatile | FLASH | 2.7 V | 3.6 V | Surface Mount | Parallel | 25 ns | FLASH - NAND (SLC) | 512 M | 512 kb | 63-BGA (9x11) | 63-BGA | 85 °C | -40 °C | |||
Kioxia America, Inc. TH58NVG2S3HTA00 | Non-Volatile | FLASH | 2.7 V | 3.6 V | Surface Mount | Parallel | 25 ns | FLASH - NAND (SLC) | 512 M | 512 kb | 48-TSOP I | 48-TFSOP | 70 °C | 0 °C | 25 ns | 18.4 mm | 0.724 in |
Kioxia America, Inc. TH58NVG2S3HBAI6 | Non-Volatile | FLASH | 2.7 V | 3.6 V | Surface Mount | Parallel | 25 ns | FLASH - NAND (SLC) | 512 M | 512 kb | 63-BGA (9x11) | 63-BGA | 85 °C | -40 °C | |||
Kioxia America, Inc. TH58NVG2S3HTAI0 | Non-Volatile | FLASH | 2.7 V | 3.6 V | Surface Mount | Parallel | 25 ns | FLASH - NAND (SLC) | 512 M | 512 kb | 48-TSOP I | 48-TFSOP | 85 °C | -40 °C | 25 ns | 18.4 mm | 0.724 in |