BRIDGE RECT 1P 600V 30A SOT227
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Reverse Leakage @ Vr | Technology | Supplier Device Package | Package / Case | Current - Average Rectified (Io) | Diode Type | Voltage - Forward (Vf) (Max) @ If | Voltage - Peak Reverse (Max) [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Diode Configuration | Speed | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ GHXS030A060S-D1E | Chassis Mount | -55 °C | 175 ░C | 100 µA | Silicon Carbide Schottky | SOT-227 | SOT-227-4, miniBLOC | 30 A | Single Phase | 1.7 V | 600 V | ||||||
SemiQ GHXS030A120S-D1E | Chassis Mount | -55 °C | 175 ░C | 200 µA | Silicon Carbide Schottky | SOT-227 | SOT-227-4, miniBLOC | 30 A | Single Phase | 1.7 V | 1.2 kV | ||||||
SemiQ GHXS030A120S-D3 | Chassis Mount | 200 µA | SiC (Silicon Carbide) Schottky | SOT-227 | SOT-227-4, miniBLOC | 1.7 V | 1.2 kV | 175 ░C | -55 C | 2 Independent | No Recovery Time | 30 A | |||||
SemiQ GHXS030A120S-D1 | Chassis Mount | -55 °C | 175 ░C | 200 µA | Silicon Carbide Schottky | SOT-227 | SOT-227-4, miniBLOC | 30 A | Single Phase | 1.7 V | 1.2 kV |