IC NVSRAM 16KBIT PARALLEL 24EDIP
Part | Memory Type | Access Time | Package / Case | Package / Case | Package / Case | Mounting Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Memory Size | Technology | Supplier Device Package | Memory Organization | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1220AB-100+ | Non-Volatile | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 100 ns | 100 ns | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | |
Analog Devices Inc./Maxim Integrated DS1220AD-100 | Non-Volatile | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 100 ns | 100 ns | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | |
Analog Devices Inc./Maxim Integrated DS1220AB-150 | Non-Volatile | 150 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AD-150+ | Non-Volatile | 150 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AD-200 | Non-Volatile | 200 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | 200 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AB-200+ | Non-Volatile | 200 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 200 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AD-200+ | Non-Volatile | 200 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | 200 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AD-100IND+ | Non-Volatile | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 100 ns | 100 ns | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | |
Analog Devices Inc./Maxim Integrated DS1220AD-200IND+ | Non-Volatile | 200 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | 200 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AB-100IND+ | Non-Volatile | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 100 ns | 100 ns | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | |
Analog Devices Inc./Maxim Integrated DS1220AB-200IND+ | Non-Volatile | 200 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 200 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AB-100IND | Non-Volatile | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 100 ns | 100 ns | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | |
Analog Devices Inc./Maxim Integrated DS1220AB-100 | Non-Volatile | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 100 ns | 100 ns | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | |
Analog Devices Inc./Maxim Integrated DS1220AB-150IND | Non-Volatile | 150 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AB-150+ | Non-Volatile | 150 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AB-150IND+ | Non-Volatile | 150 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AD-120 | Non-Volatile | 120 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | 120 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AD-100+ | Non-Volatile | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 100 ns | 100 ns | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | |
Analog Devices Inc./Maxim Integrated DS1220AD-150 | Non-Volatile | 150 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AB-120+ | Non-Volatile | 120 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 120 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AB-120 | Non-Volatile | 120 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 70 °C | 0 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 120 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AB-200IND | Non-Volatile | 200 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.75 V | 5.25 V | 200 ns | ||
Analog Devices Inc./Maxim Integrated DS1220AD-200IND | Non-Volatile | 200 ns | 0.6 in | 24-DIP Module | 15.24 mm | Through Hole | 85 °C | -40 °C | Parallel | 16 Kbit | NVSRAM (Non-Volatile SRAM) | 24-EDIP | 2K x 8 | NVSRAM | 4.5 V | 5.5 V | 200 ns |