DMN3066LVT Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type
Diodes Inc DMN3066LVT-13	4 nC	-55 °C	150 °C	328 pF	12 V	1.5 V	MOSFET (Metal Oxide)	900 mW	3.6 A	Surface Mount	30 V	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	67 mOhm	N-Channel

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low-Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance RDS(ON)yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.