IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 22 MOHM;
| Part | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 375 W | 150 nC | N-Channel | 5 V | MOSFET (Metal Oxide) | 5380 pF | 20 V | D2PAK | Surface Mount | 200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 175 ░C | 22 mOhm | 10 V | 72 A |