Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ L PACKAGE; 3.5 MOHM;
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | 300 nC | -55 °C | 175 ░C | 100 V | N-Channel | 11560 pF | 20 V | DirectFET™ Isometric L8 | 3.3 W 125 W | 10 V | MOSFET (Metal Oxide) | 20 A 124 A | 3.5 mOhm | Surface Mount | DirectFET™ Isometric L8 |