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MOSFET N-CH 100V 100A TO262-3
| Part | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | MOSFET (Metal Oxide) | 139 nC | 20 V | 4 V | 6.5 mOhm | 214 W | PG-TO262-3 | 10 V | N-Channel | -55 °C | 175 ░C | 100 A | Through Hole | 9200 pF | I2PAK TO-262-3 Long Leads TO-262AA |