MOSFET N/P-CH 25V 8-SOIC
| Part | Power - Max [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Configuration | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 W | Surface Mount | 330 pF | 27 nC | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 100 mOhm | 3 V | N and P-Channel | 2.3 A 3.5 A | 8-SO | 25 V | ||||
Infineon Technologies | 2 W | Surface Mount | 330 pF | 27 nC | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 100 mOhm | 3 V | N and P-Channel | 2.3 A 3.5 A | 8-SO | 25 V | -55 °C | 150 °C | ||
Infineon Technologies | 2 W | Surface Mount | 290 pF | 25 nC | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 250 mOhm | 3 V | 2 P-Channel | 2.3 A | 8-SO | 20 V | -55 °C | 150 °C | Logic Level Gate | |
Infineon Technologies | 2 W | Surface Mount | 120 pF | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 300 mOhm | 3 V | 2 N-Channel (Dual) | 2 A | 8-SO | 50 V | 6.6 nC | ||||
Infineon Technologies | 2 W | Surface Mount | 320 pF | 15 nC | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 100 mOhm | 3 V | 2 N-Channel (Dual) | 3.5 A | 8-SO | 20 V | -55 °C | 150 °C | Logic Level Gate | |
Infineon Technologies | 2 W | Surface Mount | 290 pF | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 130 mOhm | 3 V | 2 N-Channel (Dual) | 3 A | 8-SO | 50 V | -55 °C | 150 °C | 30 nC | ||
Infineon Technologies | 2 W | Surface Mount | 320 pF | 15 nC | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 100 mOhm | 3 V | 2 N-Channel (Dual) | 3.5 A | 8-SO | 20 V | -55 °C | 150 °C | Logic Level Gate |