Beta
⌘K
MOSFET P-CH 20V 5.5A UFM
| Part | Operating Temperature | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | MOSFET (Metal Oxide) | 29.8 mOhm | 1 V | Surface Mount | 20 V | 840 pF | 12.8 nC | P-Channel | 500 mW | 1.5 V 4.5 V | 8 V | UFM | 5.5 A |