DMC2990UDJQ Series

Complementary Pair Enhancement Mode MOSFET

Catalog

Complementary Pair Enhancement Mode MOSFET

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Feature	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Qualification	Grade
Diodes Inc DMC2990UDJ-7	SOT-963	20 V	27.6 pF	350 mW	310 mA 450 mA	1 V	SOT-963	990 mOhm	0.5 nC	-55 °C	150 °C	Surface Mount	Logic Level Gate	N and P-Channel	MOSFET (Metal Oxide)
Diodes Inc DMC2990UDJQ-7	SOT-963	20 V	27.6 pF 28.7 pF	350 mW		1 V	SOT-963			-55 °C	150 °C	Surface Mount		N and P-Channel Complementary	MOSFET (Metal Oxide)	0.5 nC	0.4 nC	1.9 Ohm 990 mOhm	450 mA	310 mA	AEC-Q101	Automotive
Diodes Inc DMC2990UDJQ-7B	SOT-963	20 V	27.6 pF 28.7 pF	350 mW		1 V	SOT-963			-55 °C	150 °C	Surface Mount		N and P-Channel Complementary	MOSFET (Metal Oxide)	0.5 nC	0.4 nC	1.9 Ohm 990 mOhm	450 mA	310 mA	AEC-Q101	Automotive

Catalog

Complementary Pair Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V Max

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surface Mount Package 1mm x 1mm

• Low Package Profile, 0.45mm Maximum Package Height

Description

This new generation 20V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.