SIC MOSFET 1200V 80M TO-247-4L
| Part | FET Type | Power Dissipation (Max) | Vgs (Max) [Min] | Vgs (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ GP2T080A120H | N-Channel | 188 W | -10 V | 25 V | 35 A | Through Hole | TO-247-4 | 4 V | TO-247-4 | 1200 V | 100 mOhm | 1377 pF | -55 °C | 175 ░C | 61 nC | |
SemiQ GP2T080A120U | N-Channel | 188 W | -10 V | 25 V | 35 A | Through Hole | TO-247-3 | 4 V | TO-247-3 | 1200 V | 100 mOhm | 1377 pF | -55 °C | 175 ░C | 58 nC |