MOSFET N-CH 250V 8A TO220AB
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 770 pF | 51.8 nC | 4 V | TO-220 | MOSFET (Metal Oxide) | 80 W | 450 mOhm | 8 A | Through Hole | 10 V | 20 V | 150 °C | TO-220-3 | 250 V | N-Channel | ||||
STMicroelectronics | 415 pF | 5 V | TO-220 | MOSFET (Metal Oxide) | 8 A | Through Hole | 10 V | 30 V | TO-220-3 | 550 V | N-Channel | 100 W | 150 °C | -65 °C | 13 nC | ||||
STMicroelectronics | 1870 pF | 4.5 V | TO-220 | MOSFET (Metal Oxide) | 150 W | 1.4 Ohm | 6.7 A | Through Hole | 10 V | 30 V | TO-220-3 | 850 V | N-Channel | 150 °C | -55 °C | 60 nC | |||
STMicroelectronics | 380 pF | 5 V | TO-220 | MOSFET (Metal Oxide) | 1 Ohm | 8 A | Through Hole | 10 V | 30 V | TO-220-3 | 600 V | N-Channel | 100 W | 150 °C | -65 °C | 18 nC |