STW70N65M2 Series

N-channel 650 V, 0.039 Ohm typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package

Catalog

N-channel 650 V, 0.039 Ohm typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Technology	FET Type	Supplier Device Package
STMicroelectronics STW70N65M2	63 A	117 nC	650 V	46 mOhm	25 V	Through Hole	5140 pF	-55 °C	150 °C	10 V	4 V	TO-247-3	446 W	MOSFET (Metal Oxide)	N-Channel	TO-247-3

Catalog

N-channel 650 V, 0.039 Ohm typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.