MBR30035 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 35V 150A 2TOWER
| Part | Package / Case | Voltage - Forward (Vf) (Max) | Mounting Type | Technology | Current - Reverse Leakage | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Diode Pair Count | Diode Configuration | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Twin Tower | 700 mV | Chassis Mount | Reverse Polarity Schottky | 1 mA | 500 ns | 200 mA | 35 V | 150 A | 150 °C | -55 °C | 1 pair | Common Anode | Twin Tower |
GeneSiC Semiconductor | Twin Tower | 600 mV | Chassis Mount | Schottky | 3 mA | 500 ns | 200 mA | 35 V | 150 A | 150 °C | -55 °C | 1 pair | Common Cathode | Twin Tower |
GeneSiC Semiconductor | Twin Tower | 700 mV | Chassis Mount | Reverse Polarity Schottky | 1 mA | 500 ns | 200 mA | 35 V | 150 A | 150 °C | -55 °C | 1 pair | Common Anode | Twin Tower |
GeneSiC Semiconductor | Twin Tower | 600 mV | Chassis Mount | Schottky | 3 mA | 500 ns | 200 mA | 35 V | 150 A | 150 °C | -55 °C | 1 pair | Common Cathode | Twin Tower |
GeneSiC Semiconductor | Twin Tower | 650 mV | Chassis Mount | Schottky | 8 mA | 500 ns | 200 mA | 35 V | 150 A | 150 °C | -55 °C | 1 pair | Common Cathode | Twin Tower |
GeneSiC Semiconductor | Twin Tower | 650 mV | Chassis Mount | Schottky | 8 mA | 500 ns | 200 mA | 35 V | 150 A | 150 °C | -55 °C | 1 pair | Common Cathode | Twin Tower |