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100 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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100 V, P-channel Trench MOSFET
100 V, P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) | Package Name | Technology | Vgs (Max) | Rds On (Max) | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.4 A | 3.5 A | 15.2 nC 15.2 nC | 1.7 W 10.4 W | -55 °C | 150 °C | 6 V | 10 V | 544 pF | 100 V | 8-PowerVDFN | 4 V | MLPAK33 | MOSFET (Metal Oxide) | 20 V | 400 mOhm | Surface Mount | P-Channel |