Beta
⌘K
DIODE SIL CARB 600V 10A TO263-3
| Part | Technology | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Speed | Mounting Type | Current - Reverse Leakage @ Vr | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SiC (Silicon Carbide) Schottky | 480 pF | 175 ░C | -55 C | 10 A | 0 ns | No Recovery Time | Surface Mount | 140 µA | PG-TO263-3-2 | 1.7 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 600 V |